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New Measurement Techniques for Improving Semi. Device Reliability
Available on demand. Available in English, Chinese, and Japanese Language versions.

This technical seminar offers insight to stress induced damage to Si/Gate dielectrics interface and its links to emerging device reliability issues such as NBTI and Charge Trapping in high K film. Typical interface characterization techniques, including SILC, CV, charge pumping and single pulse charge trapping measurement, are described in detail and their applications are explored to explain NBTI degradation and recovery mechanism for PMOSFET and charge trapping phenomena in high K gate dielectrics.

By participating in this seminar you will learn:
  • Common interface trap characterization techniques
  • Issues and findings regarding NBTI degradation and recovery mechanism
  • Issues and findings regarding charge trapping in high K gate dielectrics
  • How interface trap characterization techniques used to allow better understanding of NBTI and charge trapping
  • A reliability solution Keithley instruments offers for helping better understand these emerging reliability issues
This seminar is recommended for engineers, students, researchers, and scientists in areas such as device reliability, new materials development, device characterization and modeling who wish to get a better understanding of how to use electrical measurements to better understand emerging issues related to device performance and reliability. A good understanding of band structure of Si/SiO2 is assumed for attendees in this seminar.

Yuegang Zhao, Sr. Application Engineer in semiconductor business group in Keithley Instruments, presents the seminar. This technical seminar offers insight to stress induced damage to Si/Gate dielectrics interface and its links to emerging device reliability issues such as NBTI and Charge Trapping in high K film. Typical interface characterization techniques, including SILC, CV, charge pumping and single pulse charge trapping measurement, are described in detail and their applications are explored to explain NBTI degradation and recovery mechanism for PMOSFET and charge trapping phenomena in high K gate dielectrics.

By participating in this seminar, you will learn about:

  • Common interface trap characterization techniques
  • Issues and findings regarding NBTI degradation and recovery mechanism
  • Issues and findings regarding charge trapping in high K gate dielectrics
  • How interface trap characterization techniques used to allow better understanding of NBTI and charge trapping
  • A reliability solution Keithley instruments offers for helping better understand these emerging reliability issues
This seminar is recommended for engineers, students, researchers, and scientists in areas such as device reliability, new materials development, device characterization and modeling who wish to get a better understanding of how to use electrical measurements to better understand emerging issues related to device performance and reliability. A good understanding of band structure of Si/SiO2 is assumed for attendees in this seminar.

Yuegang Zhao, Sr. Application Engineer in semiconductor business group in Keithley Instruments, presents the seminar.

Event Length: Approximately 40 minutes


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